Tungsten silicide (12627-41-7)

 A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a Tungsten silicide nucleation layer on the substrate using a (CVD) process with a silane source gas followed by deposition of the Tungsten silicide film with a dichlorosilane source gas. This two step process allows dichlorosilane to be used as a silicon source gas for depositing a Tungsten silicide film at a lower temperature than would otherwise by possible and without plasma enhancement. Tungsten silicide (CAS NO.12627-41-7) films deposited by this process are characterized by low impurities, good step coverage, and low stress with the silicon substrate.